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APTGT200H60
Full - Bridge Trench + Field Stop IGBT(R) Power Module
VBUS Q1 G1 Q3 G3
VCES = 600V IC = 200A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
E1
OUT1 OUT2
E3
Q2 G2
Q4 G4
E2
E4
0/VBUS
OUT1 G1 E1 VBUS 0/VBUS G2 E2
E3 G3 OUT2
E4 G4
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C
Reverse Bias Safe Operating Area
400A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGT200H60 - Rev 0
May, 2005
Max ratings 600 290 200 400 20 625
Unit V A V W
APTGT200H60
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 200A Tj = 150C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 200A R G = 5 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 200A R G = 5
Min
Typ 12.3 0.8 0.4 115 45 225 55 130 50 300 70 3.5 7
Max
Unit nF
ns
ns
mJ
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF(A V) VF trr Qrr Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions VR=600V
50% duty cycle
Min 600 Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C
Typ
Max 250 500
Unit V A A
IF = 200A VGE = 0V IF = 200A VR = 300V
di/dt =2200A/s
200 1.6 1.5 130 225 9 19
2
V ns C
APT website - http://www.advancedpower.com
2-5
APTGT200H60 - Rev 0
May, 2005
APTGT200H60
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.24 0.4 175 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Package outline (dimensions in mm)
APT website - http://www.advancedpower.com
3-5
APTGT200H60 - Rev 0
May, 2005
APTGT200H60
Typical Performance Curve
400 350 300
IC (A) Output Characteristics (VGE =15V)
TJ=25C T J=125C
Output Characteristics 400 350 300 IC (A)
T J = 150C VGE =19V
250 200 150 100 50 0 0 0.5 1
T J=25C
TJ=150C
250 200 150 100 50 0
VGE=13V VGE=15V
VGE =9V
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
400 350 300
Transfert Characteristics 14
T J=25C
Energy losses vs Collector Current 12 10 E (mJ) 8 6 4
Er Eon VCE = 300V VGE = 15V RG = 5 TJ = 150C Eoff Eon
250 IC (A) 200 150 100 50 0 5 6 7 8
T J=125C TJ =150C T J=25C
2 0 11 12 0 50
9
10
100 150 200 250 300 350 400 IC (A)
VGE (V) Switching Energy Losses vs Gate Resistance 24 20 E (mJ) 16 12 8 4 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 35
V CE = 300V V GE =15V I C = 200A T J = 150C
Reverse Bias Safe Operating Area 500
Eon
400
Eoff
Eoff Eon Er
IC (A)
300 200 100 0 0 100 200 300 400 V CE (V) 500 600 700
VGE =15V T J=150C RG=5
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.25 Thermal Impedance (C/W) 0.2 0.15 0.1 0.05 0.9 0.7 0.5 0.3 0.1
IGBT
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
APT website - http://www.advancedpower.com
4-5
APTGT200H60 - Rev 0
0.05 0 0.00001
Single Pulse
May, 2005
APTGT200H60
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80
ZVS ZCS VCE=300V D=50% RG=5 TJ =150C
Forward Characteristic of diode 400 350 300 250 IC (A) 200 150
TJ=125C TJ =150C
Tc=85C
60 40 20 0 0 50 100 150 IC (A) 200 250
Hard switching
100 50 0 0
T J=25C
0.4
0.8
1.2 1.6 VF (V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.7 0.5 0.9
Diode
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGT200H60 - Rev 0
May, 2005

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